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Si8800EDB
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
20
18
- 2.3
V
mV/°C
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 4.5 V
V DS = 0 V, V GS = ± 8 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
0.4
1
± 0.5
±6
1
10
V
μA
On-State Drain Current
a
I D(on)
V DS ?? 5 V, V GS = 4.5 V
10
A
V GS ?? 4.5 V, I D = 1 A
0.066
0.080
Drain-Source On-State Resistance a
R DS(on)
V GS ?? 2.5 V, I D = 1 A
V GS ?? 1.8 V, I D = 1 A
0.072
0.082
0.090
0.105
?
V GS ?? 1.5 V, I D = 0.5 A
0.095
0.150
Forward Transconductance
a
g fs
V DS = 10 V, I D = 1 A
10
S
Dynamic b
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 10 V, V GS = 8 V, I D = 1 A
V DS = 10 V, V GS = 4.5 V, I D = 1 A
5.5
3.2
0.42
8.3
5
nC
Gate-Drain Charge
Q gd
0.5
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = 10 V, R L = 10 ?
I D ? 1 A, V GEN = 4.5 V, R g = 1 ?
1
65
85
900
130
170
1800
k ?
Fall Time
Turn-On Delay Time
t f
t d(on)
350
25
700
50
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 10 V, R L = 10 ?
I D ? 1 A, V GEN = 8 V, R g = 1 ?
40
1100
350
80
2200
700
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
0.7
15
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1 A, V GS ?? 0 V
I F = 1 A, dI/dt = 100 A/μs, T J = 25 °C
1
13
5
8
5
1.5
25
10
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 66700
S12-1620-Rev. C, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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